Gate Leakage Tunneling Impact on the InAs / GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor
FI: 2,62
Type: Article
Artículo original
Year: 2018
Writers
Padilla, JL; Medina-Bailon, CM; Marquez, C; Sampedro, C; Donetti, L.; Gamiz, F; Ionescu, AM
Magazine
Title: IEEE TRANSACTIONS ON ELECTRON DEVICES
Quartile
- Q2