TEC04-Nanoelectronics
Advanced Therapies and Biomedical Technologies / IBS-TEC04 / Consolidated
Electronics is the science that studies and facilitates the control of the flow of electrons through vacuum, gases, liquids and solids. Due to their small mass, electrons respond quickly to electric or magnetic fields that can be applied in a controlled manner with voltage sources, permanent magnets, electromagnets, and so on. This makes them ideal particles for the transmission of energy. If, in addition, the current of electrons is modulated at will, forming electrical pulses (packets made up of many electrons), we can transmit information using certain codes, as occurs with telegraphic, telephone or telematic transmissions. Electrons can also be easily accelerated, causing the emission of electromagnetic waves. These waves are also capable of transmitting signals and information over great distances. This ease of controlling the movement of electrons has inspired and motivated thousands of scientists and engineers to build equipment capable of producing, detecting and manipulating electron currents at will. The smaller these control devices, the smaller the distance the electrons travel, the faster the information is transmitted, and the lower the energy consumption. Therefore, the idea is to reduce the size of electronic devices more and more, in a trend that, beginning in the 60s, and called Moore's Law, today has reached devices with dimensions of 7nm that are part of circuits. with more than 20.000 million transistors on a single chip. In order to explain the behavior of electrons in these devices, it is necessary to resort to Nanoscience and to manufacture them, it is necessary to apply nanotechnological tools, thus giving rise to Nanoelectronics, that is, the application of Nanoscience and Nanotechnology to Electronics. Nanoelectronics encompasses a diverse set of devices and materials with the common feature that they are so small that inter-atomic interactions and quantum properties play a fundamental role in the operation of these devices. At the nano scale, mechanisms and effects take on a fundamental role that are barely perceptible in the macro world.
Research lines
- Storage and memories. Magnetic memories, resistive memories, embedded single transistor memories.
- Development of bio-sensors for early diagnosis of cancer and infectious diseases.
- Diagnosis in Medicine. Biosensors.
- Nanoelectronic devices: Spintronics, Optoelectronics, Displays, Van-der-Waals heterostructures. Molecular electronics.
- Devices for energy storage and conversion. New solar cells based on two-dimensional materials. Supercapacitors.
- Nanoelectronic materials. New materials beyond silicon. Two-dimensional materials, graphene, ferroelectric materials.
- Microwave microscopy for analysis of histological samples
- Wearables and flexible electronics. Flexible circuits on textiles
Keywords
Biosensors, early diagnosis, liquid biopsy
CARLOS NAVARRO-MORAL
JOSE CARLOS GALDON GIL
JORGE PABLO AVILA GOMEZ
PAULA MARTINEZ MAZÓN
ELSA OF THE ZAPICO FOUNTAIN
CARLOS SAMPEDRO MATARIN
LUCA DONETTI
FRANCISCO JESUS GAMIZ PEREZ
CARLOS MARQUEZ GONZALEZ
CRISTINA MEDINA BAILON
SANTIAGO NAVARRO MORAL
JOSE LUIS PADILLA DE LA TORRE
Measurement invariance of the driving inattention scale (ARDES) across 7 countries
ACCIDENT ANALYSIS AND PREVENTION, 2024;
FI: 5,7; D1
High enhancement of sensitivity and reproducibility in label-free SARS-CoV-2 detection with graphene field-effect transistor sensors through precise surface biofunctionalization control
BIOSENSORS & BIOELECTRONICS, 2024;
FI: 10,7; D1
Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications
MICROMACHINES, 2024;
FI: 3; Q2
Low-Frequency Noise in InGaAs-OI Transistors
IEEE TRANSACTIONS ON ELECTRONIC DEVICES, 2024;
FI: 2,9; Q2
Analyzing Measurement Invariance for Studying the Gender Gap in Educational Testing A Mixed Studies Systematic Review
EUROPEAN JOURNAL OF PSYCHOLOGICAL ASSESSMENT, 2024;
FI: 3,2; Q2
Description of Gate-to-Channel Tunneling Leakage Mechanism in a 2D Monte Carlo Simulator
2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD, 2023;
3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology
SOLID-STATE ELECTRONICS, 2023;
FI: 1,7; Q3
Editorial to Letters from SISPAD-2022
SOLID-STATE ELECTRONICS, 2023;
FI: 1,7; Q3
Liquid-gate 2D material-on-insulator transistors for sensing applications
SOLID-STATE ELECTRONICS, 2023;
FI: 1,7; Q3
Simulation of BioGFET sensors using TCAD
SOLID-STATE ELECTRONICS, 2023;
FI: 1,7; Q3
A Mixed Methods Approach to the Analysis of Bias in Cross-cultural Studies
SOCIOLOGICAL METHODS & RESEARCH, 2022;
FI: 4,677; Q1
MicroRNA Regulation of the Environmental Impact on Adolescent Neurobehavioral Development: A Systematic Review
FRONTIERS IN CELLULAR NEUROSCIENCE, 2022;
FI: 6,147; Q1
Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact
IEEE ACCESS, 2022;
FI: 3,476; Q2
Validation of AQoL-8D: a health-related quality of life questionnaire for adult patients referred for otolaryngology
EUROPEAN ARCHIVES OF OTO-RHINO-LARYNGOLOGY, 2022;
FI: 3,236; Q2
Analysis of the Reformulated Source to Drain Tunneling Probability for Improving the Accuracy of a Multisubband Ensemble Monte Carlo Simulator
MICROMACHINES, 2022;
FI: 3,523; Q3
Comprehensive Analytical Modeling of an Absolute pH Sensor
SENSORS, 2021;
FI: 3,576; Q1
A Review of Sharp-Switching Band-Modulation Devices
MICROMACHINES, 2021;
FI: 2,891; Q2
Full-band quantum transport simulation in the presence of hole-phonon interactions using a mode-spacek center dot papproach
NANOTECHNOLOGY, 2021;
FI: 3,874; Q2
Hysteresis in As-Synthesized MoS2 Transistors: Origin and Sensing Perspectives
MICROMACHINES, 2021;
FI: 2,891; Q2
Improved Retention Characteristics of Z(2)-FET Employing Half Back-Gate Control
IEEE TRANSACTIONS ON ELECTRONIC DEVICES, 2021;
FI: 2,917; Q2
Detection of COVID-19 disease using graphene-based biosensors
BULLETIN OF THE ESPANOL DEL CARBON GROUP, 2020;
Active Radiation-Hardening Strategy in Bulk FinFETs
IEEE ACCESS, 2020;
FI: 3,745; Q1
Dual PN Source / Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic
IEEE ACCESS, 2020;
FI: 3,745; Q1
Investigating the transient response of Schottky barrier back-gated MoS2 transistors
2D MATERIALS, 2020;
FI: 7,14; Q1
Memory Operations of Zero Impact Ionization, Zero Subthreshold Swing FET Matrix Without Selectors
IEEE ELECTRON DEVICE LETTERS, 2020;
FI: 4,221; Q1
On the Low-Frequency Noise Characterization of Z (2) -FET Devices
IEEE ACCESS, 2019;
FI: 4,098; Q1
Simulation Perspectives of Sub-1V Single-Supply Z (2) -FET 1T-DRAM Cells for Low-Power
IEEE ACCESS, 2019;
FI: 4,098; Q1
Reliability Study of Thin-Oxide Zero-Ionization, Zero-Swing FET 1T-DRAM Memory Cell
IEEE ELECTRON DEVICE LETTERS, 2019;
FI: 3,753; Q1
Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices
IEEE TRANSACTIONS ON ELECTRONIC DEVICES, 2019;
FI: 2,704; Q2
3-D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z (2) -FETs
IEEE TRANSACTIONS ON ELECTRONIC DEVICES, 2019;
FI: 2,704; Q2
Which drivers are at risk? Factors that determine the profile of the offender driver
ACCIDENT ANALYSIS AND PREVENTION, 2018;
FI: 2,584; D1
Mechanical and thermal properties of graphene modified asphalt binders
CONSTRUCTION AND BUILDING MATERIALS, 2018;
FI: 3,485; D1
Reconfigurable electronics: Addressing the uncontrolled increase of waste electrical and electronic equipment
RESOURCES CONSERVATION AND RECYCLING, 2018;
FI: 5,12; D1
Confinement-induced InAs / GaSb heterojunction electron-hole bilayer tunneling field-effect transistor
APPLIED PHYSICS LETTERS, 2018;
FI: 3,495; Q1
Experimental Demonstration of Operational Z (2) -FET Memory Matrix
IEEE ELECTRON DEVICE LETTERS, 2018;
FI: 3,433; Q1
Human Neuro-Activity for Securing Body Area Networks: Application of Brain-Computer Interfaces to People-Centric Internet of Things
IEEE COMMUNICATIONS MAGAZINE, 2017;
FI: 10,435; D1
High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes
ACS PHOTONICS, 2017;
FI: 6,756; D1
Electromagnetic Near-Field Inhomogeneity Reduction for Image Acquisition Optimization in High-Resolution Multi-Channel Magnetic Resonance Imaging (MRI) Systems
IEEE ACCESS, 2017;
FI: 3,244; Q1
Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017;
FI: 2,588; Q2
Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs
IEEE TRANSACTIONS ON ELECTRONIC DEVICES, 2017;
FI: 2,605; Q2
Comment on “Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening”
IEEE TRANSACTIONS ON ELECTRONIC DEVICES, 2016;
FI: 2,207; Q1
Reactivity Enhancement and Fingerprints of Point Defects on a MoS2 Monolayer Assessed by ab Initio Atomic Force Microscopy
JOURNAL OF PHYSICAL CHEMISTRY C, 2016;
FI: 4,509; Q1
Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor
IEEE TRANSACTIONS ON ELECTRONIC DEVICES, 2016;
FI: 2,207; Q1
Switching Behavior Constraint in the Heterogate Electron-Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations
IEEE TRANSACTIONS ON ELECTRONIC DEVICES, 2016;
FI: 2,207; Q1
Trends and Challenges for Methodology
METHODOLOGY-EUROPEAN JOURNAL OF RESEARCH METHODS FOR THE BEHAVIORAL AND SOCIAL SCIENCES, 2016;
FI: 1,935; Q1
Analytic Potential and Charge Model of Semiconductor Quantum Wells
IEEE TRANSACTIONS ON ELECTRONIC DEVICES, 2015;
FI: 2,472; Q1
Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor
APPLIED PHYSICS LETTERS, 2015;
FI: 3,302; Q1
Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate'
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015;
FI: 2,19; Q1
Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel FET Including Quantum Confinement
IEEE TRANSACTIONS ON ELECTRONIC DEVICES, 2015;
FI: 2,472; Q1
Impact of the Back-Gate Biasing on Trigate MOSFET Electron Mobility
IEEE TRANSACTIONS ON ELECTRONIC DEVICES, 2015;
FI: 2,472; Q1
Stand-to: ultrasensitive graphene-based platform for early cancer diagnosis (Alert)
Funder: CARLOS III HEALTH INSTITUTE - FEDER
File number: DTS20 / 00038
Execution time: 01/01/2021 - 31/12/2022
PI: FRANCISCO JESUS GAMIZ PEREZ
Laser Reduced Graphene Oxide Micromalled Electrodes for Low Cost Flexible Photovoltaic Devices
Funder: IBERDROLA FOUNDATION
File number: IBERDROLA2018
Execution time: 01/09/2018 - 01/09/2019
IP: Laser Reduced Graphene Oxide Micromalled Electrodes for Low Cost Flexible Photovoltaic Devices
SELFSENS - Printed SELF-power platform for gas SENSing monitoring
Funder: EUROPEAN COMMISSION
File number: 794885
Execution time: 01/10/2018 - 30/09/2020
IP: SELFSENS - Printed SELF-power platform for gas SENSing monitoring
