Subthreshold swing (SS) degradation as the origin of SS saturation in nanoscale cryogenic gate-all-around MOSFETs
FI: 2,1
Tipo: Article
Colaboración
Año: 2025
Autores
Lee, JHY; Medina-Bailon, C; Badami, O; Georgiev, VP
Revista
Título: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Cuartil
- Q3