Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications
FI: 3
Tipo: Article
Colaboración
Año: 2024
Autores
Lee, MW; Chuang, CW; Gamiz, F; Chang, EY; Lin, YC
Revista
Título: MICROMACHINES
Cuartil
- Q2