Autor Título Original / Colaboración Selecciona una opción Original Colaboración Año Selecciona un año20152016201720182019202020212022202320242025 Cuartil Selecciona un cuartilD1Q1Q2Q3Q4 Tipo Selecciona un tipo#N/DArticleArtículoBook ChapterBook ReviewClinical TrialCommentaryCorrectionData PaperEditorialEditorial MaterialExpression of ConcernLetterProceedings PaperReprintReview Revista Linking extreme response style to response processes: A cross-cultural mixed methods approach Autores: Benitez, I; He, J; Van de Vijver, FJR; Padilla, JL Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor Autores: Padilla, JL; Palomares, A; Alper, C; Gamiz, F; Ionescu, AM Electrical characterization and conductivity optimization of laser reduced graphene oxide on insulator using point-contact methods Autores: Marquez, C; Rodriguez, N; Ruiz, R; Gamiz, F Comment on «Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening» Autores: Padilla, JL; Palomares, A; Gamiz, F Reactivity Enhancement and Fingerprints of Point Defects on a MoS2 Monolayer Assessed by ab Initio Atomic Force Microscopy Autores: Gonzalez, C; Dappe, YJ; Biel, B Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor Autores: Padilla, JL; Alper, C; Gamiz, F; Ionescu, AM Switching Behavior Constraint in the Heterogate Electron-Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations Autores: Padilla, JL; Alper, C; Gamiz, F; Ionescu, AM < 1 2 … 1.224 1.225 1.226 … 1.706 1.707 >
