Autor Título Original / Colaboración Selecciona una opción Original Colaboración Año Selecciona un año20152016201720182019202020212022202320242025 Cuartil Selecciona un cuartilD1Q1Q2Q3Q4 Tipo Selecciona un tipo#N/DArticleArtículoBook ChapterBook ReviewClinical TrialCommentaryCorrectionData PaperEditorialEditorial MaterialExpression of ConcernLetterProceedings PaperReprintReview Revista Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs Autores: Medina-Bailon, C; Padilla, JL; Sampedro, C; Alper, C; Gamiz, F; Ionescu, AM Translucency thresholds for dental materials Marianne Autores: Salas, M; Lucena, C; Herrera, LJ; Yebra, A; Della Bona, A; Perez, MM Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor Autores: Padilla, JL; Medina-Bailon, C; Alper, C; Gamiz, F; Ionescu, AM Multiclass classification for skin cancer profiling based on the integration of heterogeneous gene expression series Autores: Galvez, JM; Castillo, D; Herrera, LJ; San Roman, B; Valenzuela, O; Ortuno, FM; Rojas, I A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET Autores: Alper, C; Padilla, JL; Palestri, P; Ionescu, AM Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities Autores: Padilla, JL; Medina-Bailon, C; Navarro, C; Alper, C; Gamiz, F; Ionescu, AM Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor Autores: Padilla, JL; Medina-Bailon, CM; Marquez, C; Sampedro, C; Donetti, L; Gamiz, F; Ionescu, AM < 1 2 … 1.199 1.200 1.201 … 1.706 1.707 >
