Autor Título Original / Colaboración Selecciona una opción Original Colaboración Año Selecciona un año2015201620172018201920202021202220232024 Cuartil Selecciona un cuartilD1Q1Q2Q3Q4 Tipo Selecciona un tipo#N/DArticleArtículoBook ChapterBook ReviewClinical TrialCommentaryCorrectionData PaperEditorialEditorial MaterialLetterProceedings PaperReprintReview Revista Switching Behavior Constraint in the Heterogate Electron-Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations Autores: Padilla, JL; Alper, C; Gamiz, F; Ionescu, AM Trends and Challenges for Methodology Autores: Padilla, JL; Lugtig, P Ultra-low power 1T-DRAM in FDSOI technology Autores: El Dirani, H; Lee, KH; Parihar, MS; Lacord, J; Martinie, S; Barbe, JC; Mescot, X; Fonteneau, P; Broquin, JE; Ghibaudo, G; Galy, P; Gamiz, F; Taur, Y; Kim, YT; Cristoloveanu, S; Bawedin, M An Embedded Lightweight Folded Printed Quadrifilar Helix Antenna UAV telemetry and remote control systems Autores: Gonzalez, JMF; Padilla, P; Valenzuela-Valdes, JF; Padilla, JL; Sierra-Perez, M Insights on the Body Charging and Noise Generation by Impact Ionization in Fully Depleted SOI MOSFETs Autores: Marquez, C; Rodriguez, N; Gamiz, F; Ohata, A Confinement orientation effects in S/D tunneling Autores: Medina-Bailon, C; Sampedro, C; Gamiz, F; Godoy, A; Donetti, L Systematic method for electrical characterization of random telegraph noise in MOSFETs Autores: Marquez, C; Rodriguez, N; Gamiz, F; Ohata, A < 1 2 … 1.023 1.024 1.025 … 1.504 1.505 >
