Autor Título Original / Colaboración Selecciona una opción Original Colaboración Año Selecciona un año2015201620172018201920202021202220232024 Cuartil Selecciona un cuartilD1Q1Q2Q3Q4 Tipo Selecciona un tipo#N/DArticleArtículoBook ChapterBook ReviewClinical TrialCommentaryCorrectionData PaperEditorialEditorial MaterialLetterProceedings PaperReprintReview Revista On the influence of the back-gate bias on InGaAs Trigate MOSFETs Autores: Marin, EG; Ruiz, FG; Godoy, A; Gonzalez-Medina, JM; Tienda-Luna, IM; Toral, A; Gamiz, F Competitive 1T-DRAM in 28 nm FDSOI Technology for Low-Power Embedded Memory Autores: El Dirani, H; Bawedin, M; Lee, K; Parihar, M; Mescot, X; Fonteneau, P; Galy, P; Gamiz, F; Kim, YT; Ferrari, P; Cristoloveanu, S Impact of Device Geometry of the Fin Electron-Hole Bilayer Tunnel FET Autores: Aiper, C; Padilla, JL; Paiestri, P; Ionescu, AM Electrical Characterization of Random Telegraph Noise in Back-Biased Ultrathin Silicon-On-Insulator MOSFETs Autores: Marquez, C; Rodriguez, N; Gamiz, F; Ohata, A Confinement Orientation Effects in S/D tunneling Autores: Medina-Bailon, C; Sampedro, C; Gamiz, F; Godoy, A; Donetti, L Analytic Potential and Charge Model of Semiconductor Quantum Wells Autores: Marin, EG; Tienda-Luna, IM; Ruiz, FG; Gonzalez-Medina, JM; Godoy, A; Gamiz, F Multi-Subband Ensemble Monte Carlo Study of Band-to-Band Tunneling in Silicon-based TFETs Autores: Medina-Bailon, C; Sampedro, C; Padilla, JL; Gamiz, F; Godoy, A; Donetti, L < 1 2 … 1.019 1.020 1.021 … 1.504 1.505 >
