Autor Título Original / Colaboración Selecciona una opción Original Colaboración Año Selecciona un año2015201620172018201920202021202220232024 Cuartil Selecciona un cuartilD1Q1Q2Q3Q4 Tipo Selecciona un tipo#N/DArticleArtículoBook ChapterBook ReviewClinical TrialCommentaryCorrectionData PaperEditorialEditorial MaterialLetterProceedings PaperReprintReview Revista Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor Autores: Padilla, JL; Alper, C; Medina-Bailon, C; Gamiz, F; Ionescu, AM Comment on ‘Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate’ Autores: Padilla, JL; Alper, C; Gamiz, F; Ionescu, AM Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel FET Including Quantum Confinement Autores: Padilla, JL; Alper, C; Godoy, A; Gamiz, F; Ionescu, AM Impact of the Back-Gate Biasing on Trigate MOSFET Electron Mobility Autores: Marin, EG; Ruiz, FG; Godoy, A; Tienda-Luna, IM; Martinez-Blanque, C; Gamiz, F Mobility and Capacitance Comparison in Scaled InGaAs Versus Si Trigate MOSFETs Autores: Marin, EG; Ruiz, FG; Godoy, A; Tienda-Luna, IM; Gamiz, F Response to «Comment on ‘Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor'» [Appl. Phys. Lett. 106, 026102 (2015)] Autores: Padilla, JL; Alper, C; Gamiz, F; Ionescu, AM Confinement Orientation Effects in S/D tunneling Autores: Medina-Bailon, C; Sampedro, C; Gamiz, F; Godoy, A; Donetti, L < 1 2 … 1.018 1.019 1.020 … 1.504 1.505 >
