Z (2) -FET as Capacitor-Less eDRAM Cell For High-Density Integration
FI: 2,605
Type: Article
Artículo original
Year: 2017
Writers
Navarro, C; Duan, M; Parihar, MS; Adamu-Lema, F; Coseman, S; Lacord, J; Lee, K; Sampedro, C; Cheng, BJ; El Dirani, H; Barbe, JC; Fonteneau, P; Kim, YES; Cristoloveanu, S; Bawedin, M; Millar, C; Galy, P; Le Royer, C; Karg, S; Riel, H; Wells, P; Kim, YT; Asenov, A; Gamiz, F
Magazine
Title: IEEE TRANSACTIONS ON ELECTRON DEVICES
Quartile
- Q2