Reliability Study of Thin-Oxide Zero-Ionization, Zero-Swing FET 1T-DRAM Memory Cell
FI: 3,753
Type: Article
Artículo original
Year: 2019
Writers
Navarro, S; Navarro, C; Marquez, C; Salazar, N; Galy, P; Cristoloveanu, S; Gamiz, F.
Magazine
Title: IEEE ELECTRON DEVICE LETTERS
Quartile
- Q1