Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications

FI: 3,4
Type: Article

Home · TEC04-Nanoelectronics

Collaboration

Year: 2023

Brands

Lee, M.W.; Lin, Y.C.; Hsu, H.T. Gamiz, F; Chang, E.Y.

Magazine

Title: MICROMACHINES

Quartile

Q2