Improved Retention Characteristics of Z(2)-FET Employing Half Back-Gate Control
FI: 2,917
Type: Article
Collaboration
Year: 2021
Writers
Kwon, S; Navarro, C; Gamiz, F; Galy, P; Cristoloveanu, S; Kim, Y.T.; Ahn, J.
Magazine
Title: IEEE TRANSACTIONS ON ELECTRON DEVICES
Quartile
- Q2