Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires
FI: 2,588
Type: Article
Artículo original
Year: 2017
Writers
Martinez-Blanque, C; Marin, E.G.; Toral, A; Gonzalez-Medina, JM; Ruiz, FG; Godoy, A; Gamiz, F.
Magazine
Title: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Quartile
- Q2