Confinement-induced InAs / GaSb heterojunction electron-hole bilayer tunneling field-effect transistor
FI: 3,495
Type: Article
Artículo original
Year: 2018
Writers
Padilla, JL; Medina-Bailon, C; Alper, C; Gamiz, F; Ionescu, A.M.
Magazine
Title: APPLIED PHYSICS LETTERS
Quartile
- Q1