Comment on “Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening”
FI: 2,207
Type: Editorial Material
Artículo original
Year: 2016
Writers
Padilla, JL; Palomares, A; Gamiz, F.
Magazine
Title: IEEE TRANSACTIONS ON ELECTRON DEVICES
Quartile
- Q1