Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate'
FI: 2,19
Type: Editorial Material
Artículo original
Year: 2015
Writers
Padilla, JL; Alper, C; Gamiz, F; Ionescu, A.M.
Magazine
Title: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Quartile
- Q1