Capacitor-less dynamic random access memory based on a III-V transistor with a gate length of 14 nm
Type: Article
Artículo original
Year: 2019
Writers
Navarro, C; Karg, S; Marquez, C; Navarro, S; Convertino, C; Zota, C; Czornomaz, L; Gamiz, F.
Magazine
Title: NATURE ELECTRONICS