Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities
FI: 2,62
Type: Article
Artículo original
Year: 2018
Writers
Padilla, JL; Medina-Bailon, C; Navarro, C; Alper, C; Gamiz, F; Ionescu, A.M.
Magazine
Title: IEEE TRANSACTIONS ON ELECTRON DEVICES
Quartile
- Q2