A review of the Z (2) -FET 1T-DRAM memory: Operation mechanisms and key parameters
FI: 1,666
Type: Article
Collaboration
Year: 2018
Writers
Cristoloveanu, S; Lee, KH; Parihar, MS; El Dirani, H; Lacord, J; Martinie, S; LeRoyer, C; Barbe, JC; Mescott, X; Fonteneau, P; Galy, P; Gamiz, F; Navarro, C; Cheng, B; Duan, M; Adamu-Lema, F; Asenov, A; Taurus, Y; Xu, Y; Kim, YT; Wan, J; Bawedin, M.
Magazine
Title: SOLID-STATE ELECTRONICS
Quartile
- Q3