A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni / HfO2 / Si-n (+) - based RRAMs

Collaboration

Year: 2017

Aldana, S; Garcia-Fernandez, P; Rodriguez-Fernandez, A; Romero-Zaliz, R; Gonzalez, MB; Jimenez-Molinos, F; Campabadal, F; Gomez-Campos, F; Roldan, J.B.

Title: JOURNAL OF PHYSICS D-APPLIED PHYSICS

• Q2