3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology

Artículo original

Year: 2023

Navarro, C; Donetti, L; Padilla, JL; Medina-Bailon, C; Galdon, J.C.; Marquez, C; Sampedro, C; Gamiz, F.

Title: SOLID-STATE ELECTRONICS

• Q3